PTFA142401FL V4 R250 Infineon Technologies
PTFA142401FL V4 R250
Manufacturer Part Number
PTFA142401FL V4 R250
Description
RF MOSFET Small Signal RFP-LDMOS GOLDMOS 8
Manufacturer
Infineon Technologies
Specifications of PTFA142401FL V4 R250
Configuration
Single
Resistance Drain-source Rds (on)
0.05 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
2 A
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
H-34288-2
Other names
FA142401FLV4R25NT
Related parts for PTFA142401FL V4 R250
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
IC FET RF LDMOS 240W H-34288-2
Manufacturer:
Infineon Technologies
Part Number:
Description:
Thermally-Enhanced High Power RF LDMOS FET
Manufacturer:
Infineon Technologies
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
16-bit microcontroller with 2x2 KByte RAM
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Si-MMIC-amplifier in SIEGET 25-technologie
Manufacturer:
Infineon Technologies AG
Datasheet: