IXFN48N60P IXYS, IXFN48N60P Datasheet
IXFN48N60P
Manufacturer Part Number
IXFN48N60P
Description
MOSFET N-CH 600V 40A SOT-227
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFN48N60P.pdf
(4 pages)
Specifications of IXFN48N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
8860pF @ 25V
Power - Max
625W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Forward Transconductance Gfs (max / Min)
53 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
40 A
Power Dissipation
625 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
40
Rds(on), Max, Tj=25°c, (?)
0.14
Ciss, Typ, (pf)
8860
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
625
Rthjc, Max, (ºc/w)
0.2
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN48N60P
Quantity:
118
PolarHV
Power MOSFET
Symbol
(T
BV
V
I
I
R
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
GSS
DSS
© 2006 IXYS All rights reserved
D25
DM
AR
GS(th)
DS(on)
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
ISOL
d
J
DSS
= 25°C, unless otherwise specified)
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
S
ISOL
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
≤ 1 mA
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/μs, V
DSS
HiPerFET
, I
D
D
DC
D
= 250 μA
= 8 mA
, V
= 4 A
G
= 2 Ω
DS
= 0
GS
= 1 MΩ
DD
T
J
≤ V
= 125°C
t = 1 s
t = 1 min
DSS
JM
IXFN 48N60P
,
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
2500
3000
600
600
±30
±40
110
625
150
300
2.0
40
48
70
10
30
±200
1000
140
Max.
5.5
25
V/ns
mΩ
mJ
nA
μA
μA
V~
V~
°C
°C
°C
°C
W
g
V
V
V
V
V
V
A
A
A
J
V
I
R
t
Features
•
•
•
Advantages
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
D25
rr
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
G
≤ ≤ ≤ ≤ ≤ 200 ns
≤ ≤ ≤ ≤ ≤ 140 mΩ Ω Ω Ω Ω
= 600
=
S
D = Drain
40
D
DS99337E(03/06)
A
V
S
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IXFN48N60P Summary of contents
Page 1
... ± GSS DSS DS DSS DS(on Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFN 48N60P Maximum Ratings 600 = 1 MΩ 600 GS ±30 ±40 40 110 2.0 ≤ DSS 625 -55 ... +150 150 -55 ... +150 300 min 2500 3000 1 ...
Page 2
... Pulse test, t ≤ 300 μs, duty cycle d ≤ 25A, -di/dt = 100 A/μ 100V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max ...
Page 3
... V olts D S Fig Nor m alize d to DS(on 24A V alue ain Cur 3 10V 3.1 GS 2.8 2.5 2.2 1.9 1.6 1 mperes D © 2006 IXYS All rights reserved º C 120 100 º C 3.1 = 10V 2.8 7V 2.5 2.2 6V 1.9 1.6 1.3 5V 0.7 ...
Page 4
... T = 125º 0.4 0.5 0.6 0.7 0.8 0 olts S D Fig. 11. Capacitance 100000 f = 1MH z 10000 1000 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions. 100 6 6 25º 1.1 1.2 1 IXFN 48N60P Fig. 8. Trans conductance -40º 25º ...