ESM3030DV STMicroelectronics, ESM3030DV Datasheet

IC PWR MODULE DARL NPN ISOTOP

ESM3030DV

Manufacturer Part Number
ESM3030DV
Description
IC PWR MODULE DARL NPN ISOTOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of ESM3030DV

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
100A
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
1.5V @ 2.4A, 85A
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 85A, 5V
Power - Max
225W
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6691-5
ESM3030DV

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ESM3030DV
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
ESM3030DV
Manufacturer:
ST
Quantity:
27
INDUSTRIAL APPLICATIONS:
ABSOLUTE MAXIMUM RATINGS
September 2003
V
Symbol
CEO(sus)
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ULTRAFAST FREEWHEELING DIODE
FULLY INSULATED PACKAGE (UL
COMPLIANT)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
MOTOR CONTROL
SMPS & UPS
DC/DC & DC/AC CONVERTERS
WELDING EQUIPMENT
V
V
V
T
P
I
I
CEV
EBO
I
CM
T
I
BM
isol
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Insulation Withstand Voltage (RMS) from All
Four Terminals to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
®
th
JUNCTION CASE
Parameter
p
c
= 10 ms)
= 25
C
NPN DARLINGTON POWER MODULE
p
= 0)
= 10 ms)
B
o
BE
C
= 0)
= -5 V)
INTERNAL SCHEMATIC DIAGRAM
-55 to 150
Value
2500
400
300
100
150
225
150
ISOTOP
10
7
5
ESM3030DV
Unit
o
o
W
V
V
V
A
A
A
A
V
C
C
1/8

Related parts for ESM3030DV

ESM3030DV Summary of contents

Page 1

... Insulation Withstand Voltage (RMS) from All isol Four Terminals to Exernal Heatsink T Storage Temperature stg T Max. Operating Junction Temperature j September 2003 NPN DARLINGTON POWER MODULE INTERNAL SCHEMATIC DIAGRAM = - ms ms ESM3030DV ISOTOP Value Unit 400 V 300 100 A 150 225 W 2500 V o -55 to 150 C o ...

Page 2

... ESM3030DV THERMAL DATA R Thermal Resistance Junction-case (transistor) thj-case R Thermal Resistance Junction-case (diode) thj-case R Thermal Resistance Case-heatsink With Conductive thc-h Grease Applied ELECTRICAL CHARACTERISTICS (T Symbol Parameter I # Collector Cut-off CER Current ( Collector Cut-off CEV Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(SUS) Sustaining Voltage ...

Page 3

... Safe Operating Areas Derating Curve Collector Emitter Saturation Voltage Thermal Impedance Collector-emitter Voltage Versus base-emitter Resistance Base-Emitter Saturation Voltage ESM3030DV 3/8 ...

Page 4

... ESM3030DV Reverse Biased SOA Reverse Biased AOA Switching Times Inductive Load 4/8 Foward Biased SOA Forward Biased AOA Switching Times Inductive Load Versus Temperature ...

Page 5

... Dc Current Gain Peak Reverse Current Versus di Turn-on Switching Waveforms Typical V /dt Turn-on Switching Test Circuit F ESM3030DV Versus 5/8 ...

Page 6

... ESM3030DV Turn-on Switching Test Circuit Turn-off Switching Test Circuit of Diode 6/8 Turn-off Switching Waveforms Turn-off Switching Waveform of Diode ...

Page 7

... ESM3030DV inch TYP. MAX. 0.480 0.358 0.322 0.033 0.080 1.503 1.248 1.003 0.950 0.976 0.594 0.503 1.169 0.169 0.196 0.169 0.173 1 ...

Page 8

... ESM3030DV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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