SST12LF01-QDE Microchip Technology, SST12LF01-QDE Datasheet

SST12LF01-QDE

Manufacturer Part Number

SST12LF01-QDE

Description

IC FRONT END MOD 2.4GHZ 24WQFN

Manufacturer

Microchip Technology

Datasheet

1.SST12LF01-QDE.pdf (19 pages)

Specifications of SST12LF01-QDE

Rf Type

Bluetooth, WLAN

Frequency

2.4GHz

Package / Case

24-WFQFN Exposed Pad

Maximum Operating Temperature

+ 80 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

0 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SST12LF01-QDETR

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FEATURES:

• Gain:

• Low-Noise Figure

• 50

• IIP3

• High linear output power:

• High power-added efficiency/Low operating

• Low idle current

PRODUCT DESCRIPTION

The SST12LF01 is a 2.4 GHz Front-End Module (FEM)

that combines a high-performance Low-Noise Amplifier

(LNA) and a Power Amplifier (PA).

Designed in compliance with IEEE 802.11 b/g applications

and based on GaAs PHEMT/HBT technology, the

SST12LF01 operates within the frequency range of 2.4–

2.55 GHz at a very low DC-current consumption. There are

two components to the FEM: the Receiver (RX) chain and

the Transmitter (TX) chain.

The RX chain consist of a cost effective Low-Noise Ampli-

fier (LNA) cell which requires no external RF-matching

components. This device is based on the 0.5m GaAs

PHEMT technology, and complies with 802.11 b/g applica-

tions.

The LNA provides high-performance, low-noise, and mod-

erate gain operation within the 2.4–2.55 GHz frequency

band. Across this frequency band, the LNA typically pro-

vides 12 dB gain and 1.45 dB noise figure.

This LNA cell is designed with a self DC-biasing scheme,

which maintains low DC current consumption, nominally at

11 mA, during operation. Optimum performance is

S71330-06-000

– Typically 12 dB gain across 2.4–2.5 GHz for

– Typically 29 dB gain across 2.4–2.5 GHz over tem-

– Typical 1.45 dB across 2.4–2.55 GHz

– >1 dbm across 2.4–2.55 GHz

– >26.5 dBm P1dB

– Meets 802.11g OFDM ACPR requirement up to

– ~3% added EVM up to 19 dBm for

– Meets 802.11b ACPR requirement up to 24 dBm

current for both 802.11g/b applications

– ~22%/210 mA @ P

– ~26%/240 mA @ P

– ~70 mA I

Receiver (RX) chain.

perature 0°C to +80°C for Transmitter (TX) chain.

23 dBm

54 Mbps 802.11g signal

Input/Output matched along RX chain.

11/10

OUT

2.4 GHz Front-End Module

SST12LF012.4 GHz Front-End Module

= 22 dBm for 802.11g

= 23.5 dBm for 802.11b

SST12LF01

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

• Low shut-down current (Typical 2.5 µA)

• Built-in, Ultra-low I

• High-speed power-up/down

• High temperature stability

• Simple input/output matching

• Single positive power supply

• Packages available

• All non-Pb (lead-free) devices are RoHS compliant

APPLICATIONS:

• WLAN

• Bluetooth

• Wireless Network

achieved with only a single power supply and no external

bias resistors or networks are required. The input and out-

put ports are singled-ended 50 Ohm matched. RF ports

are also DC isolated requiring no dc blocking capacitors or

matching components to reduce system board Bill of Mate-

rials (BOM) cost.

The TX chain includes a high-efficiency PA based on

InGaP/GaAs HBT technology. The PA typically provides 30

dB gain with 22% power-added efficiency at P

dBm for 802.11g and 27% power-added efficiency at P

= 24 dBm for 802.11b.

The Transmitter chain has excellent linearity, typically <4%

added EVM up to 20 dBm output power, which is essential

for 54 Mbps 802.11g operation while meeting 802.11g

spectrum mask at 23 dBm.

The SST12LF01 is offered in 24-contact WQFN package.

See Figure 2 for pin assignments and Table 1 for pin

descriptions.

– I

– Turn on/off time (10%- 90%) <100 ns

– Typical power-up/down delay with driver delay

– ~1 dB gain/power variation between 0°C to +85°C

– 24-contact WQFN – 4mm x 4mm

included <200 ns

REF

<4 mA

These specifications are subject to change without notice.

REF

power-up/down control

Data Sheet

OUT

= 22

OUT

Related parts for SST12LF01-QDE

SST12LF01-QDE Summary of contents

Page 1

... OUT • Low idle current – ~ PRODUCT DESCRIPTION The SST12LF01 is a 2.4 GHz Front-End Module (FEM) that combines a high-performance Low-Noise Amplifier (LNA) and a Power Amplifier (PA). Designed in compliance with IEEE 802.11 b/g applications and based on GaAs PHEMT/HBT technology, the SST12LF01 operates within the frequency range of 2.4– ...

Page 2

Page 3

... GHz Front-End Module SST12LF01 PIN ASSIGNMENTS V CC FIGURE 2: Pin Assignments for 24-contact WQFN ©2010 Silicon Storage Technology, Inc LNA Top View (contacts facing down OUT RF and DC GND OUT _TX2 Data Sheet 19 18 LNA OUT 1330 P1.1 S71330-06-000 11/10 ...

Page 4

... PA-enable and current control PWR PA power supply, bias circuit Unconnected pin Unconnected pin input Unconnected pin Unconnected pin Unconnected pin O LNA RF Output Unconnected pin Unconnected pin Unconnected pin PWR LNA power supply Unconnected pin Unconnected pin 4 SST12LF01 T1.0 1330 S71330-06-000 11/10 ...

Page 5

... GHz Front-End Module SST12LF01 ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec- ifications. Refer to Figures 3 through 14 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” ...

Page 6

... Harmonics at 22 dBm, without external filters ©2010 Silicon Storage Technology, Inc. 2.4 GHz Front-End Module Min. Typ 2400 Min. Typ 2400 0 SST12LF01 Max. Unit 2550 MHz dB dB dBm T3.1 1330 Max. Unit 2485 MHz dBm dBm 33 dB ±0 dBm dBm % ...

Page 7

... GHz Front-End Module SST12LF01 TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions 3.0V S11 versus Frequency -10 -20 -30 - Frequency (GHz) S21 versus Frequency -10 -20 -30 -40 - Frequency (GHz) FIGURE 3: S-Parameters, RX Chain ©2010 Silicon Storage Technology, Inc. = 25°C, unless otherwise specified -10 -20 -30 -40 -50 - -10 -15 -20 -25 -30 ...

Page 8

... Data Sheet 3.0 2.5 2.0 1.5 1.0 0.5 0 1.5 FIGURE 4: Noise Figure versus Frequency, RX Chain ©2010 Silicon Storage Technology, Inc. Frequency (GHz) 2.0 2.5 Frequency (GHz) 8 2.4 GHz Front-End Module SST12LF01 Temp = -10 degree Temp = 25 degree Temp = 80 degree 3.0 1330 F8.1 S71330-06-000 11/10 ...

Page 9

... GHz Front-End Module SST12LF01 -10 -15 1 FIGURE 5: Frequency Response of Gain (S21) over three Temperatures ©2010 Silicon Storage Technology, Inc. Temp = - 10 degree Room temp Temp = 80 degree 2 3 Frequency (GHz) 9 Data Sheet 4 1330 F12.1 S71330-06-000 11/10 ...

Page 10

... Data Sheet 2.1 2.2 2.3 FIGURE 6: Input IP3 versus Frequency, RX Chain ©2010 Silicon Storage Technology, Inc. 2.4 2.5 2.6 2.7 Frequency (GHz) 10 2.4 GHz Front-End Module SST12LF01 VDD=3.3V VDD=3.0V VDD=3.6V 2.8 2.9 3 1330 F9.1 S71330-06-000 11/10 ...

Page 11

... GHz Front-End Module SST12LF01 -10 2 FIGURE 7: Input P1dB versus Frequency, RX Chain ©2010 Silicon Storage Technology, Inc. 2.2 2.4 2.6 Frequency (GHz) 11 Data Sheet VDD = 3.3 VDD = 3.0 VDD = 3.6 2.8 3 1330 F10.1 S71330-06-000 11/10 ...

Page 12

... GHz Front-End Module SST12LF01 4.0 6.0 8.0 10.0 12.0 Frequency (GHz) 4.0 6.0 8.0 10.0 12.0 Frequency (GHz) 1330 sparm2-1.1 S71330-06-000 11/10 ...

Page 13

... GHz Front-End Module SST12LF01 TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions 2.447 GHz, V 360 340 320 300 280 260 240 220 200 180 160 140 120 100 FIGURE 9: Supply Current versus Output Power FIGURE 10: Power Added Efficiency (PAE) versus Output Power ©2010 Silicon Storage Technology, Inc. ...

Page 14

... Freq=2.412 GHz 38 Freq=2.447 GHz 36 Freq=2.484 GHz FIGURE 12: Power Gain versus Output Power ©2010 Silicon Storage Technology, Inc. EVM versus Output Power Output Power (dBm) Power Gain versus Output Power Output Power (dBm) 14 2.4 GHz Front-End Module SST12LF01 1330 F3 1330 F11.0 S71330-06-000 24 11/10 ...

Page 15

... GHz Front-End Module SST12LF01 TEST CONDITIONS 3.3V -10 -20 -30 -40 -50 -60 -70 2.35 FIGURE 13: 802.11g Spectrum Mask at 23 dBm Test Conditions 3.3V -10 -20 -30 -40 -50 -60 -70 -80 2.35 FIGURE 14: 802.11b Spectrum Mask at 23 dBm ©2010 Silicon Storage Technology, Inc. = 25°C, 54 MBPS 802.11G OFDM SIGNAL A 2 ...

Page 16

... PA RF OUT 1 0.1 µ F FIGURE 15: Typical Schematic ©2010 Silicon Storage Technology, Inc Block DC Block 0.1 µ F 0.1 µ 100 REF I 16 2.4 GHz Front-End Module SST12LF01 0.1 µ F LNA LNA RF OUT 113 mil 0. µ REG REG 1330 Schematic1.2 S71330-06-000 11/10 ...

Page 17

... Valid combinations for SST12LF01 SST12LF01-QDE SST12LF01-QDF SST12LF01 Evaluation Kits SST12LF01-QDE-K SST12LF01-QDF-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2010 Silicon Storage Technology, Inc. ...

Page 18

... SST Package Code: QD ©2010 Silicon Storage Technology, Inc. SIDE VIEW BOTTOM VIEW 0.2 4.00 ± 0.08 0.075 0.05 Max 0.80 0.70 18 2.4 GHz Front-End Module SST12LF01 See notes 2 and 3 Pin 1 2.3 0.5 BSC 2.3 0.30 0.18 0.45 0.35 1mm 24-wqfn-4x4-QD-2.0 leads. ...

Page 19

... GHz Front-End Module SST12LF01 TABLE 5: Revision History Revision 00 • Initial release of data sheet 01 • Updated pins 9 and 11 in Figure 2 on page 3 • Updated pin 6, 9, and 11 in Table 1 on page 4 • Updated Figure 11 on page 14 • Updated Figure 15 on page 16 02 • ...

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