BPW77NB Vishay, BPW77NB Datasheet

Photodetector Transistors NPN Phototransistor 850nm +/-10 Deg

BPW77NB

Manufacturer Part Number
BPW77NB
Description
Photodetector Transistors NPN Phototransistor 850nm +/-10 Deg
Manufacturer
Vishay
Type
Chipr
Datasheet

Specifications of BPW77NB

Maximum Power Dissipation
250 mW
Maximum Dark Current
100 nA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
TO-18
Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
250mW
Viewing Angle
10°
No. Of Pins
3
Light Current
20mA
Dark Current
100nA
C-e Breakdown Voltage
70V
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
100nA
Wavelength
850nm
Power - Max
250mW
Mounting Type
Through Hole
Orientation
Top View
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
100nA
Power Dissipation
250mW
Peak Wavelength
850nm
Half-intensity Angle
20deg
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPW77NB
Manufacturer:
INFINEON
Quantity:
15 600
Part Number:
BPW77NB
Manufacturer:
德律风根
Quantity:
20 000
BPW77NA, BPW77NB
Vishay Semiconductors
DESCRIPTION
BPW77 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and glass lens. It is sensitive to visible and near
infrared radiation.
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
www.vishay.com
402
amb
PRODUCT SUMMARY
COMPONENT
BPW77NA
BPW77NB
ORDERING INFORMATION
ORDERING CODE
BPW77NA
BPW77NB
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Total power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Thermal resistance junction/gase
= 25 °C, unless otherwise specified
Silicon NPN Phototransistor, RoHS Compliant
For technical questions, contact: detectortechsupport@vishay.com
94 8401
PACKAGING
Connected with Cu wire, 0.14 mm
7.5 to 15
I
ca
> 10
Bulk
Bulk
(mA)
t
p
TEST CONDITION
/T = 0.5, t
T
amb
t ≤ 5 s
≤ 25 °C
p
≤ 10 ms
MOQ: 1000 pcs, 1000 pcs/bulk
MOQ: 1000 pcs, 1000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 10°
• Base terminal connected
• Hermetically sealed package
• Lead
APPLICATIONS
• Detector in electronic control and drive circuits
RoHS 2002/95/EC and WEEE 2002/96/EC
2
REMARKS
ϕ (deg)
(Pb)-free
± 10
± 10
SYMBOL
V
V
V
R
R
T
T
I
T
P
CBO
CEO
EBO
CM
I
T
amb
thJA
thJC
stg
C
sd
V
j
component
- 40 to + 125
- 40 to + 125
VALUE
100
250
125
260
400
150
80
70
50
5
PACKAGE FORM
in
Document Number: 81527
450 to 1080
450 to 1080
λ
TO-18
TO-18
0.1
accordance
Rev. 1.5, 08-Sep-08
(nm)
UNIT
K/W
K/W
mW
mA
mA
°C
°C
°C
°C
V
V
V
with

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BPW77NB Summary of contents

Page 1

... BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens sensitive to visible and near infrared radiation. PRODUCT SUMMARY COMPONENT BPW77NA BPW77NB Note Test condition see table “ ...

Page 2

... 100 Ω mA off = 100 Ω mA TEST CONDITION PART , λ = 950 nm, BPW77NA mW/ BPW77NB 150 Fig Relative Collector Current vs. Ambient Temperature BPW77NA, BPW77NB Vishay Semiconductors MIN. TYP. MAX 100 6 ± 10 850 450 to 1080 0.15 0 110 SYMBOL MIN. TYP. MAX 2.50 2. mW/cm 2.00 e λ ...

Page 3

... BPW77NA, BPW77NB Vishay Semiconductors 100 BPW77NB 10 BPW77NA 1 0 λ = 950 nm 0.01 0.01 0 Irradiance (mW/cm 94 8349 e Fig Collector Light Current vs. Irradiance 10 λ = 950 mW/cm e 0.2 mW/cm 1 0.1 mW/cm 0.05 mW/cm 0.02 mW/cm 0.1 0 Collector Emitter Voltage (V) 94 8350 CE Fig Collector Light Current vs. Collector Emitter Voltage ...

Page 4

... PACKAGE DIMENSIONS in millimeters Chip position Drawing-No.: 6.503-5023.01-4 Issue:1; 01.07.96 96 12180 Document Number: 81527 For technical questions, contact: detectortechsupport@vishay.com Rev. 1.5, 08-Sep-08 2.54 nom 0.02 Ø 4.69 - 0.07 + 0.02 0.45 - 0.05 Lens BPW77NA, BPW77NB Vishay Semiconductors technical drawings according to DIN specifications www.vishay.com 405 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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