NESG2031M05-EVNF58 CEL, NESG2031M05-EVNF58 Datasheet

RF Germanium For NESF2031M05-A Noise Fig at 5.8 GHz

NESG2031M05-EVNF58

Manufacturer Part Number

NESG2031M05-EVNF58

Description

RF Germanium For NESF2031M05-A Noise Fig at 5.8 GHz

Manufacturer

CEL

Datasheet

1.NESG2021M05-A.pdf (14 pages)

Specifications of NESG2031M05-EVNF58

Continuous Collector Current

35 mA

Emitter- Base Voltage Vebo

1.5 V

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Power Dissipation

175 mW

Package / Case

SOT-343

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 14
Download datasheet (730Kb)

ELECTRICAL CHARACTERISTICS

Notes:

• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY

• LOW NOISE FIGURE:

• HIGH MAXIMUM STABLE GAIN:

• LOW PROFILE M05 PACKAGE:

• Pb Free

FEATURES

NF = 0.9 dB at 2 GHz

NF = 1.3 dB at 5.2 GHz

MSG = 22.5 dB at 2 GHz

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance

CEO

1. MSG =

2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to

3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.

SYMBOLS

the guard pin.

= 5 V (Absolute Maximum)

MSG

OIP

CBO

EBO

21E

1dB

Noise Figure at V

Associated Gain at V

Noise Figure at V

Associated Gain at V

Maximum Stable Gain

Insertion Power Gain at V

Output Power at 1dB Compression Point at

Output 3rd Order Intercept Point at V

Gain Bandwidth Product at V

Reverse Transfer Capacitance

Collector Cutoff Current at V

Emitter Cutoff Current at V

DC Current Gain

HIGH FREQUENCY TRANSISTOR

= Z

= 3 V, I

SOPT

, ZL = Z

= 12 mA, f = 2 GHz

PARAMETERS AND CONDITIONS

at V

LOPT

= 2 V, I

PACKAGE OUTLINE

at V

= 2 V, I

PART NUMBER

= 2 V, I

= 3 V, I

= 3 mA, f = 5.2 GHz,

= 3 mA, f = 2 GHz,

= 1 V, I

= 3 V, I

= 5V, I

at V

= 3 V, I

= 3 mA, f = 5.2 GHz,

= 3 mA, f = 2 GHz,

= 5 mA

= 25°C)

= 10 mA, f = 2 GHz

= 0

= 2 V, I

= 10 mA, f = 2 GHz

= 0

= 3 V, I

= 10 mA, f = 2 GHz

NEC's NPN SiGe

= 0 mA, f = 1 GHz

= 12 mA, f = 2 GHz

DESCRIPTION

NEC's NESG2021M05 is fabricated using NECʼs high voltage

Silicon Germanium process (UHS2-HV), and is designed for

a wide range of applications including low noise ampliﬁers,

medium power ampliﬁers, and oscillators.

NECʼs low proﬁle, ﬂat lead style M05 Package provides high

frequency performance for compact wireless designs.

M05

California Eastern Laboratories

UNITS

dBm

GHz

15.0

20.0

17.0

MIN

130

NESG2021M05

M05

TYP

10.0

18.0

22.5

19.0

17.0

190

1.3

0.9

9.0

0.1

MAX

100

260

1.2

0.2

Related parts for NESG2031M05-EVNF58

NESG2031M05-EVNF58 Summary of contents

Page 1

HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY (Absolute Maximum) CEO • LOW NOISE FIGURE 0 GHz 5.2 GHz • HIGH MAXIMUM STABLE GAIN: ...

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C P Total Power Dissipation Junction Temperature J T Storage Temperature ...

Page 3

TYPICAL PERFORMANCE CURVES COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 Base to Emitter Voltage CURRENT GAIN vs. COLLECTOR CURRENT 1 000 ...

Page 4

TYPICAL PERFORMANCE CURVES GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 35 ...

Page 5

TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 MSG MAG 21e Collector Current, I INSERTION POWER GAIN, MAG, ...

Page 6

TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 20 MAG 21e Collector Current INSERTION POWER ...

Page 7

TYPICAL PERFORMANCE CURVES OUTPUT POWER, COLLECTOR CUR- RENT vs. INPUT POWER GHz (RF OFF out -20 -15 -10 -5 Collector ...

Page 8

TYPICAL PERFORMANCE CURVES NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current NOISE FIGURE, ASSOCIATED GAIN vs. ...

Page 9

TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 NESG2021M05 FREQUENCY S 11 GHz MAG ANG 0.200 0.946 -10.22 0.400 0.939 -21.17 0.600 ...

Page 10

TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 NESG2021M05 FREQUENCY S 11 GHz MAG ANG 0.200 0.835 -18.33 0.400 0.800 -36.01 0.600 ...

Page 11

TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 50 -j10 -j25 -j50 NESG2021M05 FREQUENCY S 11 GHz MAG ANG 0.200 0.844 -16.85 0.400 0.811 -32.92 0.600 ...

Page 12

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M05 FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD 2.05±0.1 1.25±0.1 3 2.0 ±0.1 4 +0.1 0.30 -0.05 0.59±0.05 PIN CONNECTIONS 1. Base 2. Emitter 3. Collector 4. Emitter 2 0.65 1.30 0.65 1 ...

Page 13

... These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. ...

Page 14

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

Related keywords

NESG2031M05-EVNF58 datasheet
NESG2031M05-EVNF58 data sheet
NESG2031M05-EVNF58 pdf datasheet
NESG2031M05-EVNF58 component
NESG2031M05-EVNF58 part
NESG2031M05-EVNF58 distributor
NESG2031M05-EVNF58 RoHS
NESG2031M05-EVNF58 datasheet download