BLF878 NXP Semiconductors, BLF878 Datasheet
BLF878
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BLF878 Summary of contents
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... BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications ...
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... Description drain1 drain2 gate1 gate2 [1] source Ordering information Name Description - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A Rev. 02 — 15 June 2009 UHF power LDMOS transistor Simplified outline Graphic symbol © NXP B.V. 2009. All rights reserved. BLF878 sym117 Version ...
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... Conditions Min Typ Max [ 2. [ 225 GSth [ GSth MHz [ MHz [ MHz BLF878 Max Unit 89 V +11 V +150 C 200 C Typ Unit [1] 0.23 K/W [2] 0.15 K/W Unit - 105.5 V 1 140 nA 15 110 - m 190 - © NXP B.V. 2009. All rights reserved ...
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... RF performance in a common-source narrowband 860 MHz test circuit f (MHz 860 860 858 Rev. 02 — 15 June 2009 UHF power LDMOS transistor 001aai075 ( L(PEP) L(AV) p (V) (A) (W) (W) (dB) (%) [1] 40 1.4 300 - > 18 > 42 < 31 [ > 18 > 29 < 29 © NXP B.V. 2009. All rights reserved. BLF878 IMD3 D (dBc) [ ...
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... 100 I = 1.4 A; measured in a common source narrowband 860 MHz test circuit power gain and drain efficiency as a function of load power; typical values Rev. 02 — 15 June 2009 BLF878 UHF power LDMOS transistor 001aai076 80 (2) D (%) (1) 60 ( 200 300 400 P (W) L © NXP B.V. 2009. All rights reserved. ...
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... UHF power LDMOS transistor (1) ( 100 200 300 I = 1.4 A; measured in a common source narrowband Dq 860 MHz test circuit 2-Tone third order intermodulation distortion as a function of average load power; typical values © NXP B.V. 2009. All rights reserved. BLF878 001aai078 400 P (W) L(AV ...
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... L(AV 860 MHz test circuit Fig 6. DVB-T third order intermodulation distortion as a function of average load power; typical values Rev. 02 — 15 June 2009 BLF878 UHF power LDMOS transistor 001aai080 (1) (2) 50 100 150 200 P L(AV) = 1.4 A; measured in a common source narrowband = © NXP B.V. 2009. All rights reserved. ...
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... UHF power LDMOS transistor 0 20 (1) ( 400 500 600 700 800 P = 150 1.4 A; measured in a common L(AV) Dq source broadband test circuit as described 2-Tone third order intermodulation distortion as a function of frequency; typical values © NXP B.V. 2009. All rights reserved. BLF878 001aai082 900 f (MHz) Section ...
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... UHF power LDMOS transistor 0 20 (1) ( 400 500 600 700 800 1.4 A; measured in a common L(AV) Dq source broadband test circuit as described function of frequency; typical values 001aai085 (2) (1) 800 900 f (MHz) Section 8. © NXP B.V. 2009. All rights reserved. BLF878 001aai084 900 f (MHz) Section ...
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... NXP Semiconductors 7.3 Ruggedness in class-AB operation The BLF878 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V power. 7.4 Impedance information Fig 12. Definition of transistor impedance Table 8. Simulated Z f MHz 300 325 350 375 400 425 450 ...
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... Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 13. BLF878 electromigration (I BLF878_2 Product data sheet Typical push-pull impedance and Z device impedance; impedance info 5.103 + j4.467 5.656 + j4.291 6.205 + j3.963 6.696 + j3.463 6 10 ...
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... F 470 0 4 3.9 pF 4.7 pF 100 pF 560 5 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); r Rev. 02 — 15 June 2009 BLF878 UHF power LDMOS transistor Remarks EZ90-25-TP [1] [2] [2] [1] [2] [2] [1] [2] TDK C570X7R1H106KT000N or capacitor of same quality. [3] Tekelec [3] [3] [3] [3] [ 24.5 mm [4] ...
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... Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF878_2 Product data sheet C13 C22 C21 C20 L21 L20 C14 , V D1(test L20 L1 L21 Rev. 02 — 15 June 2009 BLF878 UHF power LDMOS transistor + V D1(test) C15 C17 D2(test) C16 C18 , V and V are drain and gate D2(test) G1(test) ...
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... Fig 16. Component layout for class-AB common source amplifier BLF878_2 Product data sheet 4 3 C23 C21 C24 C22 C1 C20 12 mm Rev. 02 — 15 June 2009 UHF power LDMOS transistor C13 +V D1(test) C15 C17 C11 C12 C18 C16 C14 +V D2(test © NXP B.V. 2009. All rights reserved. BLF878 C10 001aai090 ...
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... European projection © NXP B.V. 2009. All rights reserved. BLF878 SOT979A 0.25 0.010 10.29 0.25 0.51 10.03 0.405 0.010 0.020 0.395 ...
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... Voltage Standing-Wave Ratio Data sheet status Product data sheet 3: changed maximum value changed several values. 4: removed PAR specification. Preliminary data sheet Rev. 02 — 15 June 2009 BLF878 UHF power LDMOS transistor Change notice Supersedes - BLF878_1 . © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 15 June 2009 BLF878 UHF power LDMOS transistor © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF878 All rights reserved. Date of release: 15 June 2009 Document identifier: BLF878_2 ...