QSC113 Fairchild Semiconductor, QSC113 Datasheet
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Manufacturer Part Number
QSC113
Manufacturer
Fairchild Semiconductor
Transistor Polarity
NPN
Wavelength Typ
880nm
Power Consumption
100mW
Viewing Angle
4°
No. Of Pins
2
No. Of Channels
1
Operating Temperature Range
-40°C To +100°C
Input Current Max
100µA
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Black Transparent
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
30V
Collector-emitter Sat Volt (max)
0.4V
Dark Current (max)
100nA
Light Current
9.6mA
Rise Time
5000ns
Fall Time
5000ns
Power Dissipation
100mW
Peak Wavelength
880nm
Half-intensity Angle
8deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
©2005 Fairchild Semiconductor Corporation
QSC112, QSC113, QSC114 Rev. 1.0.2
Package Dimensions
QSC112, QSC113, QSC114
Plastic Silicon Infrared Phototransistor
Features
■
■
■
■
■
■
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.10 (.25) on all non-nominal dimensions
Tight production distribution
Steel lead frames for improved reliability in solder
mounting
Good optical-to-mechanical alignment
Plastic package is infrared transparent black to
attenuate visible light
Can be used with QECXXX LED
Black plastic body allows easy recognition from LED
REFERENCE
unless otherwise specified.
SURFACE
0.032 (0.082)
0.052 (1.32)
0.800 (20.3)
0.050 (1.27)
0.116 (2.95)
0.018 (0.46)
SQ. (2X)
PACKAGE DIMENSIONS
MIN
0.100 (2.54)
0.193 (4.90)
0.030 (0.76)
0.155 (3.94)
NOM
EMITTER
NOM
Description
The QSC112/113/114 is a silicon phototransistor encap-
sulated in an infrared transparent, black T-1 package.
Schematic
COLLECTOR
EMITTER
www.fairchildsemi.com
April 2007
tm
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QSC113 Summary of contents
... Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.10 (.25) on all non-nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 Description The QSC112/113/114 is a silicon phototransistor encap- sulated in an infrared transparent, black T-1 package. 0.193 (4.90) ...
... C(ON) On-State Collector Current QSC113 On-State Collector Current QSC114 V Saturation Voltage CE(sat) t Rise Time r t Fall Time f Note: 5. λ = 880 nm, AlGaAs. ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0 25°C unless otherwise specified) A (2,3,4) (2,3) (1) (T =25°C) A Test Conditions ...
... E - Radiant Intensity (mW/cm e Figure 3. Dark Current vs. Collector - Emitter Voltage Collector-Emitter Voltage (V) CE ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 130° 140° 150° 160° 170° 180° 1 Figure 5. Dark Current vs. Ambient Temperature ...
... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 i-Lo™ Power-SPM™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ IntelliMAX™ ® QFET ISOPLANAR™ ...
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