BLF6G20-230PRN NXP Semiconductors, BLF6G20-230PRN Datasheet

RF MOSFET Small Signal 230W, 1800-2000MHz

BLF6G20-230PRN

Manufacturer Part Number
BLF6G20-230PRN
Description
RF MOSFET Small Signal 230W, 1800-2000MHz
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G20-230PRN

Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.165 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934063293112

Available stocks

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Manufacturer
Quantity
Price
Part Number:
BLF6G20-230PRN
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF6G20-230PRN
Manufacturer:
NXP
Quantity:
5 000
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
230 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
RF performance at T
[1]
Mode of operation
2-carrier W-CDMA
BLF6G20-230PRN;
BLF6G20S-230PRN
Power LDMOS transistor
Rev. 02 — 9 February 2010
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 65 W
Power gain = 17.5 dB
Efficiency = 32 %
ACPR = −32 dBc
Typical performance
case
= 25
°
C in a common source class-AB production test circuit.
f
(MHz)
1805 to 1880
Dq
of 2000 mA:
V
(V)
28
DS
P
(W)
65
L(AV)
Product data sheet
G
(dB)
17.5
p
η
(%)
32
D
ACPR
(dBc)
−31
[1]

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BLF6G20-230PRN Summary of contents

Page 1

... BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...

Page 2

... NXP Semiconductors 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pin BLF6G20-230PRN (SOT539A BLF6G20S-230PRN (SOT539B [1] Connected to flange 3. Ordering information Table 3. Type number BLF6G20-230PRN BLF6G20S-230PRN - BLF6G20-230PRN_20S-230PRN_2 Product data sheet ...

Page 3

... Symbol Parameter V (BR)DSS V GS(th) I DSS I DSX I GSS DS(on) BLF6G20-230PRN_20S-230PRN_2 Product data sheet Limiting values Parameter Conditions drain-source voltage gate-source voltage storage temperature case temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case Characteristics C per section; unless otherwise specified. drain-source breakdown ...

Page 4

... Mode of operation: 1-carrier W-CDMA; PAR 7 0.01 % probability on CCDF; 3GPP test model PDPCH 2000 mA Symbol Parameter PAR O 7.1 Ruggedness in class-AB operation The BLF6G20-230PRN and BLF6G20S-230PRN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G20-230PRN_20S-230PRN_2 Product data sheet Application information = 1802.5 MHz 2000 mA ...

Page 5

... NXP Semiconductors 7.2 Graphs 7.2.1 One tone CW Fig 1. BLF6G20-230PRN_20S-230PRN_2 Product data sheet (dB η 100 2000 mA One-tone CW power gain and drain efficiency as functions of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor 001aal412 60 ...

Page 6

... NXP Semiconductors 7.2.2 2-carrier W-CDMA (dB η 2000 mA Fig 2. 2-carrier W-CDMA power gain and drain efficiency as functions of load power; typical values Fig 4. BLF6G20-230PRN_20S-230PRN_2 Product data sheet 001aal413 40 η D APCR (%) (dBc ( MHz low ( MHz high ( MHz low ( MHz high Fig 3. 400 PAR P L(M) ...

Page 7

... SMD resistor All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor BLF6G20-230PRN INPUT REV2 R04350 NXP Value Remarks 24 pF ATC100A 4.7 μF TDK 33 pF ATC8008 ...

Page 8

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 6. Package outline SOT539A BLF6G20-230PRN_20S-230PRN_2 Product data sheet scale ...

Page 9

... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 7. Package outline SOT539B BLF6G20-230PRN_20S-230PRN_2 Product data sheet scale 31.52 9 ...

Page 10

... Section 12 “Legal information” 20081202 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor Change notice Supersedes - BLF6G20-230PRN_1 export control disclaimer added © NXP B.V. 2010. All rights reserved ...

Page 11

... Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BLF6G20-230PRN_20S-230PRN_2 Product data sheet [3] Definition This document contains data from the objective specification for product development. ...

Page 12

... NXP Semiconductors for any 13. Contact information For more information, please visit: For sales office addresses, please send an email to: BLF6G20-230PRN_20S-230PRN_2 Product data sheet liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G20-230PRN_20S-230PRN_2 All rights reserved. Date of release: 9 February 2010 ...

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