STTH2003CT STMicroelectronics, STTH2003CT Datasheet - Page 4

• Manufacturer Part Number: STTH2003CT
• Description: DIODE 300V 2X10A TO-220AB
• Manufacturer: STMicroelectronics

Specifications of STTH2003CT

• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 20µA @ 300V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.25 V at 10 A
• Recovery Time: 35 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 110 A
• Reverse Current Ir: 20 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2743-5

Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
16
14
12
10
0.60
0.50
0.40
0.30
0.20
0.10
0.00
10
8
6
4
2
0
8
6
4
2
0
0
0
V
I
RM
0
FP
S factor
V =200V
T =125°C
I =I
T =125°C
F
j
j
R
(A)
(V)
F(AV)
50
50
50
100
100
100
Peak reverse recovery current
versus dI
diode)
I =0.5 x I
Softness factor (tb/ta) versus dI
(typical values, per diode)
Transient peak forward voltage
versus dI
diode) (TO-220AB)
F
150
150
150
F(AV)
200
I =I
200
F
200
F(AV)
dI /dt(A/µs)
F
F
dI /dt(A/µs)
dI /dt(A/µs)
/dt (90% confidence, per
/dt (90% confidence, per
F
F
F
250
250
250
I =2 x I
F
300
300
F(AV)
300
350
350
350
400
400
400
Doc ID 5377 Rev 9
450
450
450
V =200V
T =125°C
R
j
F
/dt
500
500
500
Figure 6.
Figure 8.
Figure 10. Forward recovery time versus dI
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
500
400
300
200
100
80
60
40
20
0
0
25
0
0
t (ns)
t (ns)
fr
rr
50
50
100
100
Reverse recovery time versus dI
(90% confidence, per diode)
Relative variation of dynamic
parameters versus junction
temperature (reference: T
(90% confidence, per diode)
50
I =I
F
150
150
F(AV)
I =2 x I
F
200
200
dI /dt(A/µs)
dI /dt(A/µs)
S factor
I
RM
F(AV)
F
F
T (°C)
250
250
75
j
I =0.5 x I
F
300
300
F(AV)
350
350
100
V =1.1 x V max.
FR
400
400
T =125°C
j
I =I
F
j
STTH2003
= 125 °C)
F(AV)
F
450
450
V =200V
T =125°C
j
R
F
F
/dt
/dt
500
125
500