FII50-12E IXYS, FII50-12E Datasheet
FII50-12E
Manufacturer Part Number
FII50-12E
Description
IGBT PHASE NPT3 ISOPLUS I4-PAC-5
Manufacturer
IXYS
Datasheet
1.FII50-12E.pdf
(4 pages)
Specifications of FII50-12E
Configuration
Half Bridge
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 30A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
400µA
Input Capacitance (cies) @ Vce
2nF @ 25V
Power - Max
200W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
50A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS i4-Pac
Pin Count
5
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
50
Ic90, Tc = 90°c, Igbt, (a)
32
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
2.2
Rthjc, Max, Igbt, (k/w)
0.6
Package Style
ISOPLUS i4-PAC (5 - Lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NPT
in ISOPLUS i4-PAC
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
IGBTs
C25
C90
CM
CES
GES
d(off)
SC
d(on)
r
f
GES
CEK
tot
CE(sat)
GE(th)
on
off
CES
ies
Gon
thJC
thJH
3
IGBT phaseleg
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
with heatsink compound
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 30 A; V
= 1 mA; V
D-68623 Lampertheim
= 25°C
= 90°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= 600 V; V
= 900V; V
= V
= 25 V; V
= ± 15 V; R
= 0 V; V
CE
GE
CES
= 600 V; I
= ± 15 V; R
; V
GE
GE
GE
GE
GE
GE
= 15 V; T
GE
= V
= ± 20 V
G
= 0 V; T
= 0 V; f = 1 MHz
= ± 15 V; R
= 39 Ω; T
= 15 V; I
C
TM
CE
G
= 30 A
= 39 Ω
VJ
T
T
= 125°C
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
VJ
= 125°C
= 30 A
G
= 125°C
= 39 Ω; T
(T
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
4.5
Characteristic Values
Maximum Ratings
440
250
typ.
2.0
2.3
0.4
4.6
2.2
1.2
85
50
50
1200
± 20
V
2
200
50
32
CES
10
50
3
5
4
1
2
max.
200
0.4 mA
2.6
6.5
0.6 K/W
K/W
mA
µs
mJ
mJ
nC
W
nA
nF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
I
V
V
Features
• NPT
• HiPerFRED
• ISOPLUS i4-PAC
Applications
• single phaseleg
• H bridge
• three phase bridge
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
- buck-boost chopper
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
- AC drives
- controlled rectifier
CES
CE(sat) typ.
performance in resonant circuits
easy paralleling
1
3
IGBT
5
TM
= 50 A
= 1200 V
= 2.0 V
diode
FII 50-12E
TM
package
1 - 4
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FII50-12E Summary of contents
Page 1
... off MHz ies 600 Gon thJC R with heatsink compound thJH © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 Maximum Ratings 1200 ± 125° CES = 39 Ω 125° 200 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
Page 2
... V I ISOL ISOL F mounting force with clip C Symbol Conditions d ,d pin - pin pin - backside metal S A Weight © 2003 IXYS All rights reserved Maximum Ratings 48 25 Characteristic Values min. typ. max. 2.4 2.8 1 125°C 180 ns VJ 1.8 mJ 1.3 K/W 1.6 ...
Page 3
... A GE 100 Fig. 1 Typ. output characteristics 120 100 125° 25° Fig. 3 Typ. transfer characteristics 120 Fig. 5 Typ. turn on gate charge © 2003 IXYS All rights reserved 25° 600 0.0001 160 200 Fig. 6 FII 50-12E 120 100 Fig. 2 Typ. output characteristics ...
Page 4
... Fig. 9 Typ. turn on energy and switching times versus gate resistor 125° 600 200 400 600 800 1000 -di /dt [A/µs] F Fig. 11 Typ. turn off characteristics of free wheeling diode © 2003 IXYS All rights reserved 100 off 600 ± Ω 125° ...