IRG4IBC20FDPBF International Rectifier, IRG4IBC20FDPBF Datasheet
IRG4IBC20FDPBF
Specifications of IRG4IBC20FDPBF
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IRG4IBC20FDPBF Summary of contents
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... Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4IBC20FDPbF G TM ultrafast, n-channel TM 300 (0.063 in. (1.6mm) from case) Typ. ––– ––– ––– 2.0 (0.07) Fast CoPack IGBT ...
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Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ∆ ∆ GE(th) ...
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Square wave: 60% of rated voltage 4.0 I 2.0 Ideal diodes 0.0 0.1 Fig Typical Load Current vs. Frequency 100 150 20µs ...
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T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) ...
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1MHz ies res 800 oes ce gc 600 C ies 400 200 C oes C res ...
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R = 50Ohm 150 C ° 480V CC 2 15V GE 2.0 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical ...
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V = 200V 125° 25° 4. 100 di /dt - (A/µs) f Fig Typical Reverse Recovery vs. di 500 V = 200V ...
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Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. ...
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Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...
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TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220AB Full-Pak Part Marking Information TO-220AB Full-Pak package is not recommended for Surface Mount Application. Notes: Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20) GE ...