MJD31CG ON Semiconductor, MJD31CG Datasheet - Page 4

• Manufacturer Part Number: MJD31CG
• Description: TRANS POWER NPN 3A 100V DPAK
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJD31CG

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 1.56W
• Frequency - Transition: 3MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 3 A
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 1.56 W
• Maximum Operating Frequency: 3 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 25 at 1 A at 4 V
• Minimum Operating Temperature: - 65 C
• Current, Collector: 3 A
• Current, Gain: 50
• Frequency: 3 MHz
• Package Type: DPAK
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 8.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 1.2 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 3A
• Dc Current Gain (min): 25
• Frequency (max): 3MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD31CG; MJD31CGOS

1000
100
0.6
0.5
0.4
0.3
0.2
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
0
0.001
0.001
0.01
Figure 8. Collector−Emitter Saturation Voltage
I
C
V
150°C
/I
CE
Figure 6. DC Current Gain at V
B
Figure 10. Base-Emitter “On” Voltage
= 10
= 5 V
25°C
I
I
I
0.01
0.01
C
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.1
−55°C
−55°C
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
25°C
150°C
25°C
0.1
0.1
1
150°C
CE
1
1
V
CE
= 4 V
−55°C
http://onsemi.com
= 4 V
10
10
10
4
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.6
1.2
0.8
0.4
10
1
2
0
0.01
0.001
0.01
10 mA
I
C
Figure 9. Base−Emitter Saturation Voltage
150°C
/I
Figure 11. Collector Saturation Region
Figure 7. DC Current Gain at V
B
100 mA
= 10
25°C
0.1
I
I
0.01
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
I
B
−55°C
, BASE CURRENT (mA)
0.1
500 mA
25°C
150°C
−55°C
1
0.1
1 A
10
1
I
C
= 3 A
CE
1
V
100
CE
= 2 V
= 2 V
25°C
T
A
=
1000
10
10