LMN400B01-7 Diodes Inc, LMN400B01-7 Datasheet
LMN400B01-7
Specifications of LMN400B01-7
Related parts for LMN400B01-7
LMN400B01-7 Summary of contents
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... TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR General Description LMN400B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable V which does not depend on input voltage and can CE(SAT) support continuous maximum current of 400 mA ...
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... Drain Current (Page 1: Note 3) Continuous (V Pulsed (tp <10 uS, Duty Cycle <1%) Continuous Source Current DS30699 Rev Symbol Value V -50 CBO V -50 CEO V - -400 unless otherwise specified A Symbol V DSS V DGR V GSS = 10V www.diodes.com = 25 C unless otherwise specified Unit Value Unit +/-20 V +/-40 115 mA 800 115 mA LMN400B01 ...
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... L -500 -50V -0. -10mA -0.3mA -100mA -1mA -0 -0. -200mA -20mA -300mA -30mA -0 -0. -400mA -40mA -500mA -50mA -0 1.125 I = 400mA 20mA -5V - -5V -100 -5V -200 -5V -400 -0.3V -5V, = -2.5V -0 -50mA /-2.5mA - - -5V -400mA -1 -2 -50mA -5mA -400mA -20mA -5 MHz V = -10V -5mA 100MHz V = -10V 0A 1MHz LMN400B01 ...
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... I = 200 mA DS DS(ON -25V 0V 1MHz 30V, V =10V 200mA 150 115 mA 115 mA 800 7mA lb = 8mA T = 25° 6mA lb = 5mA lb = 4mA lb = 3mA lb = 2mA lb = 1mA 4.5 5.0 4.0 5.5 V COLLECTOR VOLTAGE(V) CE_SAT Fig. 4, Output Current vs. Voltage Drop (Pass Element PNP) LMN400B01 ...
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... A 100 100 , I COLLECTOR CURRENT (mA) C Fig vs www.diodes.com -55° 125° 25° 150° 85° COLLECTOR CURRENT (A) C Fig vs. I CE(SAT -55° 125° 25° 150° 85°C A 100 1000 10000 , I COLLECTOR CURRENT (mA) C Fig vs. I BE(ON) C 1000 LMN400B01 ...
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... Fig. 15 Static Drain-Source On-Resistance www.diodes.com -55° 25° 125° 85° 150° GATE-SOURCE VOLTAGE (V) GS Fig. 11 Transfer Characteristics Pulsed T = 125° 150° 85° 25° -55°C A 0.01 0 DRAIN CURRENT ( vs. Drain Current T = 25°C A Pulsed I = 115mA GATE SOURCE VOLTAGE (V) GS, vs. Gate-Source Voltage LMN400B01 ...
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... Drain Current ( www.diodes.com T = 125° 150° 25° 85° Pulsed 0 SOURCE-DRAIN VOLTAGE (V) SD Fig. 17 Reverse Drain Current vs. Source-Drain Voltage T = -55° 25° 85° 125° 150°C A 0.2 0.4 0.6 0 DRAIN CURRENT (A) D Fig. 19 Forward Transconductance > DS(ON) LMN400B01 ...
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... Application Details PNP Transistor (DDTB122LU) and N-MOSFET (DSNM6047) with gate pull-down resistor integrated as one in LMN400B01 can be used as a discrete entity for general application integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device ...
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... Ordering Information (Note 5) Device LMN400B01-7 Note: 5. For Packaging Details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PM3 Fig. 22 Date Code Key Year Code Month Jan Feb Code 1 2 DS30699 Rev Marking Code Packaging PM3 SOT-26 PM3 = Product Type Marking Code Date Code Marking ...
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... All Dimensions in mm Figure 24 Dimensions Typical dimensions in mm IMPORTANT NOTICE LIFE SUPPORT SOT-26 Max Typ 0.5 0.38 1.7 1.6 3 2.8 - 0.95 - 0.55 3.1 3 0.1 0.05 1.3 1.1 0.55 0.4 0.2 0.15 8° - SOT-26* 3.2 1.6 0.55 0.8 2.4 0.95 LMN400B01 ...