1N5767 MICROSEMI, 1N5767 Datasheet
1N5767
Specifications of 1N5767
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1N5767 Summary of contents
Page 1
... The 1N5767 and the 1N5957 PIN diodes are based upon low capacitance PIN chips designed with long minority carrier lifetime, and thick intrinsic width. Thus operation as low as 1 MHz is possible with low distortion. Additionally, the low diode capacitance allows useful operation well into the microwave frequency range ...
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... Carrier Lifetime Reverse Current Current for Rs = 75Ω Return Loss Second Order Distortion Third Order Distortion 20000 10000 1000 100 Copyright 2005 Rev. 0, 2006-01-17 1N5767 (5082-3080) SERIES Symbol Conditions C V =100V MHz µA, F= 100 MHz mA 100 MHz 100 mA 100 MHz S τ ...
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... Copyright 2005 Rev. 0, 2006-01-17 1N5767 (5082-3080) SERIES FORWARD VOLTAGE versus CURRENT - 0.0 0.2 0.4 0.6 FORWARD VOLTAGE (V) Ct versus Vr TYPICAL 0.8 0.7 0.6 1 MHz 0.5 5 MHz 0.4 10 MHz 0.3 => 100 MHz 0 (V) Microsemi 1N5957SERIES 1N5767 1N5957 0.8 1.0 1.2 100 ...
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... Copyright 2005 Rev. 0, 2006-01-17 1N5767 (5082-3080) SERIES PARALLEL RESISTANCE versus REVERSE VOLTAGE TYPICAL 500 MHz 100 MHz 1 GHz 3 GHz 10 Vr (V) Microsemi 1N5957SERIES 100 200 Page 4 ...
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... Copyright 2005 Rev. 0, 2006-01-17 1N5767 (5082-3080) SERIES 1N5957SERIES NOTES: Microsemi Page 5 ...