BF909 NXP Semiconductors, BF909 Datasheet
BF909
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... BF909; BF909R N-channel dual gate MOS-FETs Rev. 02 — 19 November 2007 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below ...
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... DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The handbook, halfpage Top view MAM124 BF909 marking code: %M3. Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER V drain-source voltage DS I drain current D P ...
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... P tot (mW) 200 150 BF909R BF909 100 100 Fig.3 Power derating curves. CONDITIONS see Fig note 1 amb note 1 amb MLB935 150 200 amb Rev November 2007 Product specification BF909; BF909R MIN. MAX. UNIT 200 mW 200 mW 65 +150 C 150 ...
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... 120 k ; note G1 G2 see Fig.18 mA; unless otherwise specified. DS G2-S D CONDITIONS pulsed MHz MHz MHz f = 800 MHz Rev November 2007 BF909; BF909R CONDITIONS VALUE note 1 500 550 note 290 360 s MIN G1 G2 0.5 S- 0 G1-S DS MIN. ...
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... V 1 Fig.6 Output characteristics; typical values. MLB936 handbook, halfpage gain reduction (dB MLB938 handbook, halfpage ( Rev November 2007 BF909; BF909R (mA 0.4 0.8 1 Fig.5 Transfer characteristics; typical values. 200 150 100 Fig.7 Gate 1 current as a function of gate 1 voltage; typical values. ...
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... G2 120 k (connected Fig.10 Drain current as a function of gate 1 supply voltage (= V see Fig.18. MLB940 handbook, halfpage 3 2 (mA Fig.9 MLB942 handbook, halfpage ( typical values; GG Rev November 2007 BF909; BF909R (mA G2 Drain current as a function of gate 1 current; typical values (mA G2-S connected Fig.11 Drain current as a function of gate and drain supply voltage ...
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... 120 k (connected Fig.13 Gate 1 current as a function of gate 2 MLB946 (MHz mA Fig.15 Reverse transfer admittance and phase as Rev November 2007 Product specification BF909; BF909R voltage; typical values; see Fig.18 (MHz amb a function of frequency; typical values. MLB945 = ...
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... R GEN MLB948 2 10 handbook, halfpage y os (mS) fs (deg (MHz mA AGC 4 DUT 4 Fig.18 Cross-modulation test set-up. Rev November 2007 Product specification BF909; BF909R (MHz amb Fig.17 Output admittance as a function of frequency; typical values 350 4.7 nF MLD151 V DS MLB949 ...
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... G2 min (dB) (ratio) 2.00 0.603 Rev November 2007 Product specification BF909; BF909R = ANGLE MAGNITUDE (ratio) (deg) (ratio) 0.001 86.9 0.985 0.002 82.7 0.982 0.005 74.3 0.973 0.006 68.9 0.960 0.007 59.6 ...
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... TOP VIEW Fig.19 SOT143. 3.0 2.8 0.150 1.9 0.090 3 0.1 max o 10 max 2 0.48 o 0.38 30 max 1.7 0 TOP VIEW Fig.20 SOT143R. Rev November 2007 BF909; BF909R B 0 2.5 1.4 max 1 MBC845 0 0.48 0.1 1 2.5 1.4 max 1 ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev November 2007 BF909; BF909R N-channel dual gate MOS-FETs ...
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... NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF909; BF909R N-channel dual gate MOS-FETs Supersedes BF909_1 - All rights reserved. Date of release: 19 November 2007 Document identifier: BF909_N_2 ...