Ordering number : ENN7548
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : W250
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW 10s)
Drain Current (PW 100ms)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
•
•
•
Low ON-resistance.
Ultrahigh-speed switcing.
4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Tstg
I DP
Tch
P D
P T
yfs
I D
I D
I D
Ultrahigh-Speed Switching Applications
duty cycle 1%
duty cycle 1%
PW 10 s, duty cycle 1%
Mounted on a ceramic board(2000mm
Mounted on a ceramic board(2000mm
I D =1mA, V GS =0
V DS =60V, V GS =0
V GS = 16V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =3A
I D =3A, V GS =10V
I D =1.5A, V GS =4V
FW250
Conditions
Package Dimensions
unit : mm
2129
Conditions
0.595
8
1
1.27
2
2
0.8mm)1unit, PW 10s
0.8mm), PW 10s
5.0
0.43
4
5
[FW250]
min
N-Channl Silicon MOSFET
1.2
2.8
91603 TS IM TA-100553
60
Ratings
typ
Ratings
150
110
0.2
4
Continued on next page.
--55 to +150
FW250
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
max
150
3.5
5.5
1.8
2.2
145
215
2.6
60
20
20
10
3
1
No.7548-1/4
Unit
Unit
m
m
W
W
V
V
A
A
A
A
V
V
S
C
C
A
A