STPS80H100 STMicroelectronics, STPS80H100 Datasheet
STPS80H100
Available stocks
Related parts for STPS80H100
STPS80H100 Summary of contents
Page 1
... Packaged in ISOTOP, this device is intended for use in medium voltage operation, and particu- larly, in high frequency circuitries where low switching losses and low noise are required. Parameter Tc = 120° sinusoidal square F = 1kHz tp = 100 s square STPS80H100TV ISOTOP Value Unit 100 ...
Page 2
... STPS80H100TV THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * ms, < 380 s, < evaluate the maximum conduction losses use the following equation : ...
Page 3
... Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 Tc=50°C 0.4 = 0.2 Tc=75°C = 0.1 0.2 Tc=110°C 0.0 1E-1 1E+0 1E-3 Fig. 6: voltage applied (typical values, per diode). C(nF) 5.0 1.0 0 100 1 1.4 1.6 1.8 2.0 STPS80H100TV Single pulse tp(s) 1E-2 1E-1 1E+0 Junction capacitance versus reverse VR( =tp/T 5E+0 F=1MHz Tj=25°C 50 100 3/4 ...
Page 4
... Maximum torque value: 1.5 N.m. Ordering type Marking STPS80H100TV STPS80H100TV Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...