MBM200GR HITACHI, MBM200GR Datasheet

MBM200GR

Manufacturer Part Number

MBM200GR

Description

Manufacturer

HITACHI

Datasheet

1.MBM200GR.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MBM200GR12

Manufacturer:

HITACH

Quantity:

20 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

MBM200GR12

Quantity:

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

MBM200GR6

Quantity:

Current page: 1 of 4
Download datasheet (166Kb)

[Rated 200A/1200V, Dual-pack type]

FEATURES

CIRCUIT DIAGRAM

ABSOLUTE MAXIMUM RATINGS (T

Notes; *1 : RMS current of diode ≤ 60 Arms

CHARACTERISTICS (T

Notes; *4 : R

Remark; For actual application,please confirm this spec.sheet is the newest revision.

• Low saturation voltage and high speed.

• Low turn-OFF switching loss.

• Low noise due to built-in free-wheeling diode.

• High reliability structure.

• Isolated heat sink (terminals to base).

Hitachi IGBT Module / Silicon N-Channel IGBT

MBM200GR12A

Reverse Recovery Time

C2E1

Collector-Emitter Cut-Off Current

Gate-Emitter Leakage Current

Collector-Emitter Saturation Voltage

Gate-Emitter Threshold Voltage

Input Capacitance

Switching Times

Peak Forward Voltage Drop

Thermal Impedance

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

Forward Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Isolation Voltage

Screw Torque

(Ultra Soft and Fast recovery Diode (USFD))

*2 ,*3 : Recommended value 1.67 N·m

the suitable R

value is the test condition’s value for decision of the switching times, not recommended value, please determine

Item

IGBT

FWD

value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.

Rise Time

Turn-On Time

Fall Time

Turn-Off Time

1ms

Terminals

Mounting

=25°C)

Symbol

GE(TO)

CE(sat)

CES

GES

th(j-c)

off

ies

Symbol

=25°C)

GES

CES

stg

iso

°C/W

Unit

µs

Min.

OUTLINE DRAWING

N·m

Unit

°C

RMS

2- 5.6

18000

Typ.

0.15

2.2

0.3

0.1

0.5

0.2

2.5

3-M5

±500

Max.

1.0

2.8

0.3

0.6

0.3

1.0

0.4

3.5

0.1

0.2

C2E1

Inductive Load

Junction to case

2500(AC 1 minute)

=200A

=200A, V

=6.2Ω

=1200V, V

=±20V, V

=5V, I

=10V, V

=600V, I

=±15V

-40 ~ +150

-40 ~ +125

Value

1.96

1200

1250

200

±20

200

400

18.5

Test Conditions

=200mA

0.8

PDE-M200GR12A-0

=200A

=0V

=15V

=0V, f=1MHz

=0V

Weight：230g

4-Fast-on

Terminal #110

Unit in mm

Related parts for MBM200GR

MBM200GR Summary of contents

Page 1

... Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] FEATURES • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) • High reliability structure. ...

Page 2

VGE 15V14V13V12V 400 = ° 300 = Pc 1250W 200 100 Collector to Emitter Voltage, V Collector current vs. Collector to Emitter voltage 10 = ° ...

Page 3

Vcc 600V V 15V Inductive Load 1 0.5 toff 0 0 100 200 Collector Current Switching time vs. Collector current 40 V 600V CC V 15V GE R 6.2 ...

Page 4

... Or consult Hitachi’s sales department staff event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets ...

Related keywords

MBM200GR datasheet
MBM200GR data sheet
MBM200GR pdf datasheet
MBM200GR component
MBM200GR part
MBM200GR distributor
MBM200GR RoHS
MBM200GR datasheet download