FW2504P Fairchild Semiconductor, FW2504P Datasheet
FW2504P
Related parts for FW2504P
FW2504P Summary of contents
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... Thermal Resistance, Junction-to-Ambient R θJA Package Marking and Ordering Information Device Marking Device 2503N FDW2503N 2000 Fairchild Semiconductor Corporation MOSFET Features • 5 • Extended V GSS • Low gate charge • High performance trench technology for extremely ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ===∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
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Typical Characteristics 4.5V GS 3.5V 3. 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 4.5V GS 1.4 ...
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Typical Characteristics 5. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10ms 10 100ms 1s ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...