FZ800R12KS4 Eupec GmbH, FZ800R12KS4 Datasheet

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FZ800R12KS4

Manufacturer Part Number
FZ800R12KS4
Description
Manufacturer
Eupec GmbH
Datasheet

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Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Alfons Wiesenthal
approved by: Chr. Lübke; 11.08.2000
IGBT-Module
IGBT-Modules
1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
V
f = 1MHz,T
f = 1MHz,T
V
V
V
date of publication: 04.08.2000
revision: 2 (Series)
FZ 800 R 17 KF6C B2
C
C
C
P
P
C
C
C
R
GE
CE
CE
CE
= 1 ms, T
= 1 ms
= 800A, V
= 800A, V
= 60mA, V
=25°C, Transistor
= 80 °C
= 25 °C
= 0V, t
= 1700V, V
= 1700V, V
= 0V, V
= -15V ... +15V
p
= 10ms, T
vj
vj
GE
C
GE
GE
CE
= 25°C,V
= 25°C,V
= 80°C
= 20V, T
= 15V, T
= 15V, T
GE
GE
= V
= 0V, T
= 0V, T
GE
1(8)
, T
Vj
CE
CE
vj
= 125°C
vj
vj
vj
= 25°C
= 25V, V
= 25V, V
= 25°C
= 125°C
= 25°C
vj
vj
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
C
I
I
P
CE sat
CRM
FRM
GE(th)
Q
GES
CES
I
ISOL
CES
I
GES
I
2
C
F
res
tot
ies
G
t
min.
4,5
-
-
-
-
-
-
-
-
+/- 20V
1700
1300
1600
1600
typ.
0,02
800
800
170
6,6
2,6
3,1
5,5
9,6
2,7
52
10
4
-
FZ800R17KF6CB2
max.
400
3,1
3,6
6,5
1,5
80
-
-
-
kA
kW
mA
mA
µC
kV
nF
nF
nA
V
A
A
A
V
A
A
V
V
V
2
s

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FZ800R12KS4 Summary of contents

Page 1

Technische Information / Technical Information IGBT-Module IGBT-Modules 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated ...

Page 2

Technische Information / Technical Information IGBT-Module IGBT-Modules Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) ...

Page 3

Technische Information / Technical Information IGBT-Module IGBT-Modules Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical ...

Page 4

Technische Information / Technical Information IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) 1800 1600 1400 1200 1000 800 600 400 200 0 0,0 0,5 1,0 Ausgangskennlinienfeld (typisch) Output characteristic (typical) 1800 1600 vGE = 20V vGE = 15V 1400 vGE ...

Page 5

Technische Information / Technical Information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) 1800 1600 1400 1200 1000 800 600 400 200 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 1800 1600 1400 1200 1000 800 ...

Page 6

Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 1200 Eoff 1000 EON Erec 800 600 400 200 0 0 200 400 Schaltverluste (typisch) Switching losses (typical) 1000 900 Eoff EON 800 Erec 700 600 500 400 ...

Page 7

Technische Information / Technical Information IGBT-Module FZ 800 R 17 KF6C B2 IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 0,1 0,01 0,001 0,001 0, [K/kW] : IGBT i [sec] : IGBT i r [K/kW] : Diode i [sec] : ...

Page 8

Technische Information / Technical Information IGBT-Module IGBT-Modules Äußere Abmessungen / external dimensions FZ 800 R 17 KF6C B2 8(8) FZ800R17KF6CB2 ...

Page 9

Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of ...

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