ZDT1048 Zetex Semiconductors plc., ZDT1048 Datasheet - Page 3

• Manufacturer Part Number: ZDT1048
• Description: Dual Npn Medium Power High Gain Transistors
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Issue 2 - December 2007
© Zetex Semiconductors plc 2007
NOTES:
Parameter
Collector-base breakdown
voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Base-emitter turn on
voltage
Static forward
current transfer
ratio
Transition frequency
Output capacitance
Switching times
V
V
V
V
V
I
I
V
V
V
h
C
t
t
Symbol
I
f
CBO
EBO
CES
T
on
off
FE
(BR)CBO
CES
CEO
CEV
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
Min.
17.5
280
300
300
250
= 25°C unless otherwise stated).
50
50
50
50
5
1000
3
Typ.
120
200
200
900
440
450
450
300
150
120
250
8.7
0.3
0.3
0.3
85
85
24
85
27
55
80
60
Max.
1100
1000
1200
160
240
300
10
10
10
45
75
80
MHz
Unit
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
ns
V
V
V
V
V
I
I
I
I
I
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
Conditions
C
C
C
C
C
C
E
CES
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
EB
CB
=4A, I
=4A, I
=100µA
=100µA
=100µA
=10mA
=100µA, V
=0.5A, I
=1A, I
=2A, I
=5A, I
=5A, I
=5A, I
=5A, V
=10mA, V
=0.5A, V
=1A, V
=5A, V
=20A, V
=50mA, V
=35V
=4V
=10V, f=1MHz
=35V
B
B
B
B
B
B
B
=40mA,V
=±40mA,V
www.zetex.com
CE
CE
CE
=10mA
=10mA
=100mA
=50mA
=100mA
ZDT1048
B
CE
CE
=10mA
=2V
=2V
=2V
CE
CE
=2V
EB
=2V
=2V
=10V
=1V
(*)
(*)
(*)
(*)
(*)
(*)
(*)
CC
(*)
(*)
(*)
CC
(*)
(*)
=10V
=10V