NP32N055 Renesas Electronics Corporation., NP32N055 Datasheet
NP32N055
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NP32N055 Summary of contents
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... N-CHANNEL POWER MOS FET DESCRIPTION NP32N055SLE is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rating • Super low on-state resistance mΩ MAX DS(on mΩ MAX 5 DS(on)2 GS • Low 1300 pF TYP ...
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... F GS µ di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ µ ≤ Duty Cycle 1% Data Sheet D17478EJ1V0DS NP32N055SLE MIN. TYP. MAX. UNIT µ µ ±10 A 1 mΩ mΩ mΩ 24 ...
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... Starting T ch Single Pulse 10 m 100 Pulse Width - s Data Sheet D17478EJ1V0DS NP32N055SLE 75 100 125 150 175 200 - Case Temperature - ˚C DERATING FACTOR 100 125 150 175 - Starting Channel Temperature - ˚ 125 ˚ ...
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... V - Gate to Source Voltage - V GS Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 Pulsed 2.0 1.0 0 −50 100 T - Channel Temperature - ch Data Sheet D17478EJ1V0DS NP32N055SLE DRAIN TO SOURCE VOLTAGE Pulsed = Drain to Source Voltage - V Pulsed ...
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... I - Drain Current - A D Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 Q - Gate Charge - nC G Data Sheet D17478EJ1V0DS NP32N055SLE 1.0 1.5 t d(off) t d(on) 10 100 ...
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... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 0.5±0.1 No Plating 0 to 0.25 0.5±0.1 Data Sheet D17478EJ1V0DS NP32N055SLE ...
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... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP32N055SLE Not all M8E 02. 11-1 ...