MJD32 ON Semiconductor, MJD32 Datasheet - Page 3

• Manufacturer Part Number: MJD32
• Description: (MJD31 / MJD32) Complementary Power Transistors
• Manufacturer: ON Semiconductor

500
300
100
2.5
1.5
0.5
70
50
30
10
T
1.4
1.2
0.8
0.6
0.4
0.2
0.003
A
7
5
2
1
0
1
0
0.03
25
20
15
10
T
5
0
0.005 0.01 0.02 0.03 0.05 0.1
C
V
25
CE(sat)
V
0.05
T
BE(sat)
J
T
= 25°C
J
−55 °C
25°C
0.07
= 150°C
@ I
@ I
Figure 3. DC Current Gain
T
C
C
I
0.1
/I
C
I
C
T
C
50
B
, COLLECTOR CURRENT (AMPS)
/I
Figure 5. “On” Voltages
A
, COLLECTOR CURRENT (AMPS)
B
= 10
(SURFACE MOUNT)
= 10
Figure 1. Power Derating
V
BE
0.3
@ V
T, TEMPERATURE (°C)
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
75
CE
= 2 V
0.5
0.2 0.3 0.5
0.7
100
TYPICAL CHARACTERISTICS
1
V
CE
1
125
= 2 V
http://onsemi.com
2 3
3
150
3
0.07
0.05
0.03
0.02
0.07
0.05
0.03
+11 V
0
0.7
0.5
0.3
0.1
0.7
0.5
0.3
0.2
0.1
DUTY CYCLE = 1%
2
1
3
2
1
0.03
0.03
t
r
, t
−9 V
f
≤ 10 ns
0.05 0.07 0.1
0.05
R
REVERSE ALL POLARITIES FOR PNP.
t
B
Figure 2. Switching Time Test Circuit
f
t
D
@ V
r
and R
t
t
1
@ V
r
0.07
f
1N5825 USED ABOVE I
MSD6100 USED BELOW I
25 ms
MUST BE FAST RECOVERY TYPE, e.g.:
@ V
@ V
CC
CC
C
0.1
I
I
CC
CC
= 30 V
C
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
Figure 4. Turn−On Time
Figure 6. Turn−Off Time
= 10 V
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
= 30 V
= 10 V
51
0.2
t
s
′
R
0.3
0.3
B
B
≈ 100 mA
t
B
d
≈ 100 mA
@ V
0.5
−4 V
0.5 0.7
BE(off)
D
0.7
1
= 2 V
1
+30 V
I
I
t
T
1
B1
C
s
V
J
′ = t
/I
CC
= 25°C
B
= I
I
T
C
R
= 10
s
J
/I
B2
C
− 1/8 t
= 25°C
B
= 10
SCOPE
2
f
3
3