zds1009 Zetex Semiconductors plc., zds1009 Datasheet - Page 2

• Manufacturer Part Number: zds1009
• Description: Zds1009 - Current Mirror
• Manufacturer: Zetex Semiconductors plc.

ABSOLUTE MAXIMUM RATINGS.
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper
equal to 2 inches square.
ELECTRICAL CHARACTERISTICS (at T
ZDS1009
PARAMETER
Maximum Operating Voltage
Maximum Voltage (E1-E2,E3-E4)
Peak Pulse Current
Continuous Current (E1-E4,E2-E3)
Total Power Dissipation at T
Operating and Storage Temperature Range
Parameter
Breakdown Voltage
Breakdown Voltage
Breakdown Voltage
Breakdown Voltage
Breakdown Voltage
Breakdown Voltage
Breakdown Voltage
Leakage
Leakage
Leakage
Leakage
Leakage
Leakage
Leakage
Input Voltage
Input Voltage
Input Voltage
Input Voltage
Transfer
Characteristic
Transfer
Characteristic
Output Zero-Offset
Voltage
Symbol
BV
BV
BV
BV
BV
BV
BV
I
I
I
I
I
I
I
V
V
V
V
V
V
V
Y1
X1
Y1
E1
E2
E3
E4
Y1-E2
Y1-E3
X1-E1
X1-E4
OUT
OUT
OFFSET
Y1-X1
X1-E1
Y1-E3
E1-Y1
E2-Y1
E3-X1
E4-X1
amb
= 25°C*
Min
120
-30
30
-12
-6
12
6
-1.45
1.45
-1.45
1.45
0.99
1
amb
=25°C)
2
SYMBOL
V
V
I
I
P
T
M
C
Max
50
-10
10
-100
-100
100
100
-1.65
1.75
-1.75
1.65
1.01
4
tot
j
y1-x1
E-E’
:T
stg
Unit
V
V
V
V
V
V
V
nA
nA
nA
nA
nA
V
V
V
V
V
mV
mV
A
A
-55 to +150
VALUE
Conditions
I
I
I
I
I
I
I
V
V
V
V
V
V
V
See Fig 1.V
R1=R3=R4=100 , V
See Fig 1.V
R1=R3=R4=100 , V
See Fig 2.V
R1=R3=R4=100
120
Y1
X1
Y1
E1
E2
E3
E4
I
I
I
I
10
Y1
Y1
X1
X1
Y1-X1
X1-E1
Y1-E3
E1-Y1
E2-Y1
E3-X1
E4-X1
4
1
2
=100 A
=10mA
=-100 A
=-100 A
=100 A
=100uA
=-10mA
=-1A
=1A,V
=-1A,V
=1A
ISSUE 2 - JANUARY 2000
=30V,V
=-8V
=-4V
=100V
=-30V, V
=8V
=4V
X1
X1
CC
CC
CC
=V
=V
X1
=5V
=5V
=5V,R
Y1
y1
Y1
=V
=V
E3
UNIT
E1
IN
IN
W
°C
2
A
A
V
V
<1
=1V
=5mV