2sa2026 ISAHAYA ELECTRONICS CORPORRATION, 2sa2026 Datasheet
2sa2026
Manufacturer Part Number
2sa2026
Description
Transistor Pnp Smd Type
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet
1.2SA2026.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SA2026
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
DESCRIPTION
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
FEATURE
● Small collector to emitter saturation voltage.
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
2SA2026 is a super mini package resin sealed
.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Symbol
C to B break down voltage
E to Bbreak down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Parameter
V
V
V
T
I
P
T
CBO
CEO
EBO
stg
O
c
j
VCE(sat)=-0.5V max
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Parameter
(Ta=25℃)
ISAHAYA ELECTRONICS CORPORATION
(Ta=25℃)
-55∼+125
Ratings
+125
V(BR)
-300
-300
V(BR)
VCE(sat)
-100
V(BR)
150
Symbol
-7
I
I
hFE
Cob
CBO
EBO
fT
CBO
CEO
EBO
I
I
I
V
V
V
I
V
V
Unit
mW
mA
C
E
C
C
℃
℃
V
V
V
=-50μA ,I
CB
EB
CE
CE
CB
=-50μA ,I
=-1mA ,R
=-100mA ,I
=--300V, I
=-5V, I
=-10V, I
=-6V, I
=-6V, I
OUTLINE DRAWING
C
E
E
BE
=10mA
=0mA
=0,f=1MHz
C
C
B
E
=-10mA
=-10mA
=0
=0
=∞
E
=0mA
Test conditions
FOR LOW FREQUENCY AMPLIFY APPLICATION
TERMINAL CONNECTER
0.5
①
②
JEITA:SC-59
①:BASE
②:EMITTER
③:COLLECTOR
SILICON PNP EPITAXIAL TYPE
〈SMALL-SIGNAL TRANSISTOR〉
2.5
1.5
0.5
-300
-300
Min
50
-7
-
-
-
-
-
③
Limits
Typ
40
3.5
2SA2026
-
-
-
-
-
-
-
Unit:mm
305
Max
-0.5
-0.5
-0.5
-
-
-
-
-
MHz
Unit
μA
μA
V
V
V
pF
V